savantic semiconductor product specification silicon pnp power transistors 2N6467 2n6468 description with to-66 package excellent safe operating area complement to type 2n6465 2n6466 applications for use in audio amplifier applications pinning(see fig.2) pin description 1 base 2 emitter 3 collector absolute maximum ratings(ta= ) symbol parameter conditions value unit 2N6467 -110 v cbo collector-base voltage 2n6468 open emitter -130 v 2N6467 -100 v ceo collector-emitter voltage 2n6468 open base -120 v v ebo emitter-base voltage open collector -5 v i c collector current -4 a p d total power dissipation t c =25 40 w t j junction temperature 150 t stg storage temperature -65~150 thermal characteristics symbol parameter value unit r th j-c thermal resistance junction to case 2.5 /w fig.1 simplified outline (to-66) and symbol
savantic semiconductor product specification 2 silicon pnp power transistors 2N6467 2n6468 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit 2N6467 -100 v ceo(sus) collector-emitter sustaining voltage 2n6468 i c =-50ma ;i b =0 -120 v v cesat collector-emitter saturation voltage i c =-1.5a; i b =-0.15a -1.2 v v be base-emitter on voltage i c =-1.5a ; v ce =-4v -1.5 v 2N6467 v cb =-110v; i e =0 i cbo collector cut-off current 2n6468 v cb =-130v; i e =0 -10 a 2N6467 v ce = -100v,i b =0 i ceo collector cut-off current 2n6468 v ce = -120v,i b =0 -100 a i ebo emitter cut-off current v eb =-5v; i c =0 -10 a h fe dc current gain i c =-1.5a ; v ce =-4v 15 150 f t transition frequency i c =-0.5a ; v ce =-10v 5 mhz
savantic semiconductor product specification 3 silicon pnp power transistors 2N6467 2n6468 package outline fig.2 outline dimensions
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